Thin film magnetic memory device conducting data write operation by application of a magnetic field

ABSTRACT

A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an operating voltage to the peripheral circuitry supply a power supply voltage and a ground voltage, respectively. The power supply voltage line and the ground line are arranged so that a magnetic field generated by a current flowing through the power supply voltage line and a magnetic field generated by a current flowing through the ground line cancel each other in the memory array.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a thin film magnetic memorydevice. More particularly, the present invention relates to a randomaccess memory (RAM) including memory cells having a magnetic tunneljunction (MTJ).

2. Description of the Background Art

An MRAM (Magnetic Random Access Memory) device has attracted attentionas a memory device capable of non-volatile data storage with low powerconsumption. The MRAM device is a memory device capable of non-volatiledata storage using a plurality of thin film magnetic elements formed ina semiconductor integrated circuit and also capable of random access toeach thin film magnetic element.

In particular, recent announcement shows that the use of thin filmmagnetic elements having a magnetic tunnel junction (MTJ) as memorycells significantly improves performance of the MRAM device. The MRAMdevice including memory cells having a magnetic tunnel junction isdisclosed in technical documents such as “A 10 ns Read and WriteNon-Volatile Memory Array Using a Magnetic Tunnel Junction and FETSwitch in each Cell”, ISSCC Digest of Technical Papers, TA7.2, February2000, “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”,ISSCC Digest of Technical-Papers, TA7.3, February 2000, and “A 256 kb3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of TechnicalPapers, TA7.6, February 2001.

FIG. 39 schematically shows the structure of a memory cell having amagnetic tunnel junction (hereinafter, sometimes simply referred to as“MTJ memory cell”).

Referring to FIG. 39, the MTJ memory cell includes a tunnelingmagneto-resistance element TMR having an electric resistance varyingaccording to the storage data level, and an access element ATR forforming a path of a sense current Is flowing through tunnelingmagneto-resistance element TMR in data read operation. Since a fieldeffect transistor is typically used as access element ATR, accesstransistor ATR is hereinafter sometimes referred to as access transistorATR. Access transistor ATR is coupled between tunnelingmagneto-resistance element TMR and a fixed voltage (ground voltage GND).

A write word line WWL for data write operation, a read word line RWL fordata read operation, and a bit line BL are provided for the MTJ memorycell. Bit line BL serves as a data line for transmitting an electricsignal corresponding to the storage data level in data read operationand data write operation.

FIG. 40 is a conceptual diagram illustrating data read operation fromthe MTJ memory cell.

Referring to FIG. 40, tunneling magneto-resistance element TMR has aferromagnetic material layer FL having a fixed magnetization direction(hereinafter, sometimes simply referred to as “fixed magnetic layer”), aferromagnetic material layer VL that is magnetized in the directionaccording to an external magnetic field (hereinafter, sometimes simplyreferred to as “free magnetic layer”), and an antiferromagnetic materiallayer AFL for fixing the magnetization direction of fixed magnetic layerFL. A tunneling barrier (tunneling film) TB of an insulator film isinterposed between fixed magnetic layer FL and free magnetic layer VL.Free magnetic layer VL is magnetized either in the same (parallel)direction as, or in the opposite (antiparallel) direction to, that offixed magnetic layer FL according to the write data level. Fixedmagnetic layer FL, tunneling barrier TB and free magnetic layer VL forma magnetic tunnel junction.

In data read operation, access transistor ATR is turned ON in responseto activation of read word line RWL. This allows a sense current Is toflow through a current path formed by bit line BL, tunnelingmagneto-resistance element TMR, access transistor ATR and ground voltageGND.

The electric resistance of tunneling magneto-resistance element TMRvaries according to the relation between the magnetization directions offixed magnetic layer FL and free magnetic layer VL. More specifically,when fixed magnetic layer FL and free magnetic layer VL have the same(parallel) magnetization direction, tunneling magneto-resistance elementTMR has a smaller electric resistance than that of the case where theyhave opposite (antiparallel) magnetization directions.

Accordingly, when free magnetic layer VL is magnetized in the directionaccording to the storage data level, a voltage change produced ontunneling magneto-resistance element TMR by sense current Is variesdepending on the storage data level. Therefore, by precharging bit linesBL to a prescribed voltage and then applying sense current Is totunneling magneto-resistance element TMR, the storage data of the MTJmemory cell can be read by sensing the voltage on bit line BL.

FIG. 41 is a conceptual diagram illustrating data write operation to theMTJ memory cell.

Referring to FIG. 41, in data write operation, read word line RWL isinactivated and access transistor ATR is turned OFF. In this state, adata write current is applied to write word line WWL and bit line BL inorder to magnetize free magnetic layer VL in the direction according tothe write data level. The magnetization direction of free magnetic layerVL is determined by combination of the directions of the data writecurrents flowing through write word line WWL and bit line BL.

FIG. 42 is a conceptual diagram illustrating the relation between thedata write current and the magnetization direction of the tunnelingmagneto-resistance element in data write operation to the MTJ memorycell.

Referring to FIG. 42, the abscissa H(EA) indicates a magnetic field thatis applied to free magnetic layer VL of tunneling magneto-resistanceelement TMR in the easy-axis (EA) direction. The ordinate H(HA)indicates a magnetic field that is applied to free magnetic layer VL inthe hard-axis (HA) direction. Magnetic fields H(EA), H(HA) respectivelycorrespond to two magnetic fields produced by the currents flowingthrough bit line BL and write word line WWL.

In the MTJ memory cell, fixed magnetic layer FL is magnetized in thefixed direction along the easy axis of free magnetic layer VL. Freemagnetic layer VL is magnetized either in the direction parallel orantiparallel (opposite) to that of fixed magnetic layer FL along theeasy axis according to the storage data level (“1” and “0”) Hereinafter,R1 and R0 (where R1>R0) denote the electric resistances of tunnelingmagneto-resistance element TMR corresponding to the two magnetizationdirections of free magnetic layer VL.

The MTJ memory cell is thus capable of storing 1-bit data (“1” and “0”)according to the two magnetization directions of free magnetic layer VL.

The magnetization direction of free magnetic layer VL can be rewrittenonly when the sum of the applied magnetic fields H(EA) and H(HA) reachesthe region outside the asteroid characteristic line in FIG. 42. In otherwords, the magnetization direction of free magnetic layer VL will notchange if an applied data write magnetic field corresponds to the regioninside the asteroid characteristic line.

As shown by the asteroid characteristic line, applying a magnetic fieldof the hard-axis direction to free magnetic layer VL enables reductionin magnetization threshold value required to change the magnetizationdirection along the easy axis.

When the write operation point is designed as in the example of FIG. 42,a data write magnetic field of the easy-axis direction is designed tohave strength HWR in the MTJ memory cell to be written. In other words,a data write current to be applied to bit line BL or write word line WWLis designed to produce data write magnetic field HWR. Data writemagnetic field HWR is commonly defined by the sum of a switchingmagnetic field HSW required to switch the magnetization direction and amargin ΔH. Data write magnetic field HWR is thus defined by HWR=HSW+ΔH.

In order to rewrite the storage data of the MTJ memory cell, that is,the magnetization direction of tunneling magneto-resistance element TMR,a data write current of at least a prescribed level must be applied toboth write word line WWL and bit line BL. Free magnetic layer VL intunneling magneto-resistance element TMR is thus magnetized in thedirection parallel or antiparallel (opposite) to that of fixed magneticlayer FL according to the direction of the data write magnetic fieldalong the easy axis (EA). The magnetization direction written totunneling magneto-resistance element TMR, i.e., the storage data of theMTJ memory cell, is held in a non-volatile manner until another datawrite operation is conducted.

As described above, the electric resistance of tunnelingmagneto-resistance element TMR varies according to the magnetizationdirection that is rewritable by an applied data write magnetic field.Accordingly, non-volatile data storage can be realized by using the twomagnetization directions of free magnetic layer VL in tunnelingmagneto-resistance element TMR as storage data levels (“1” and “0”),respectively.

When the MRAM device integrates such MTJ memory cells, the MTJ memorycells are commonly arranged in a matrix on a semiconductor substrate.

FIG. 43 is a conceptual diagram showing the array structure of the MTJmemory cells arranged in a matrix in an integrated manner.

In FIG. 43, the MTJ memory cells are arranged in n rows by m columns(where n, m is a natural number). As described before, bit line BL,write word line WWL and read word line RWL need be provided for each MTJmemory cell.

In data write operation, a prescribed data write current is applied to awrite word line WWL and a bit line BL corresponding to the selectedmemory cell. For example, when the data is to be written to the shadedMTJ memory cell in FIG. 43, a data write current Ip of the row directionis applied to write word line WWL6, and a data write current Iw of thecolumn direction is applied to bit line BL2. Accordingly, the selectedMTJ memory cell receives both a data write magnetic field H(EA) of theeasy-axis direction and a data write magnetic field H(HA) of thehard-axis direction beyond switching magnetic field HSW of FIG. 42. As aresult, free magnetic layer VL is magnetized in the direction accordingto the write data level.

On the other hand, the non-selected memory cells of the same memory cellrow and the same memory cell column as that of the selected memory cell(in the example of FIG. 43, the non-selected memory cells correspondingto write word line WWL6 and the non-selected memory cells correspondingto bit line BL2) receive only one of data write magnetic field H(EA) ofthe easy-axis direction and data write magnetic field H(HA) of thehard-axis direction beyond switching magnetic filed HSW. In these memorycells, the magnetization direction of free magnetic layer VL will not berewritten. In other words, data write operation will not be conductedtheoretically.

If a magnetic noise of the other direction is applied to the abovenon-selected memory cells, however, data may be erroneously writtenthereto.

A typical example of such a magnetic noise is a magnetic field generatedby a current flowing through a power supply voltage line and a groundline for supplying an operating voltage to the peripheral circuitry forconducting data read operation and data write operation from and to thememory array. The current flowing through the power supply voltage lineand the ground line are likely to reach a peak during operation of theperipheral circuitry. Therefore, the magnetic noise from these power;supply lines has a certain level of intensity.

Especially for improved integration, these power supply lines may beprovided near the memory array, that is, near tunnelingmagneto-resistance elements TMR. In this case, the magnetic noise fromthe power supply lines may cause a reduced operation margin anderroneous writing. Therefore, such problems must be prevented in someway.

SUMMARY OF THE INVENTION

It is an object of the present invention to enables stable operation ofa thin film magnetic memory device by suppressing the influences ofmagnetic noises from power supply lines provided for peripheralcircuitry and the like, more specifically, magnetic noises from a powersupply voltage line and a ground line.

In summary, according to one aspect of the present invention, a thinfilm magnetic memory device includes a memory array, a peripheralcircuitry, and first and second power supply lines. The memory array hasa plurality of memory cells for magnetic data storage arranged therein.Each memory cell includes a magnetic storage portion having an electricresistance varying according to a magnetization direction that isrewritable by application of a prescribed magnetic field. The peripheralcircuitry is provided in a region adjacent to the memory array, andconducts data read operation and data write operation from and to thememory array. The first and second power supply lines supply anoperating voltage to the peripheral circuitry. The first and secondpower supply lines are arranged so that a magnetic field generated by acurrent flowing through the first power supply line and a magnetic fieldgenerated by a current flowing through the second power supply linecancel each other in the memory array.

According to another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a peripheral circuitry,and first and second power supply lines. The memory array has aplurality of memory cells for magnetic data storage arranged therein.Each memory cell includes a magnetic storage portion having an electricresistance varying according to a magnetization direction that isrewritable by application of a prescribed magnetic field. The peripheralcircuitry is provided in a region adjacent to the memory array, andconducts data read operation and data write operation from and to thememory array. The first and second power supply lines supply anoperating voltage to the peripheral circuitry. The first and secondpower supply lines are arranged so that a first magnetic field generatedby a current flowing through the first power supply line and a secondmagnetic field generated by a current flowing through the second powersupply line are applied to the memory array in an easy-axis (EA)direction of the magnetic storage portions.

According to still another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a peripheral circuitry,and first and second power supply lines. The memory array has aplurality of memory cells for magnetic data storage arranged therein.Each memory cell includes a magnetic storage portion having an electricresistance varying according to a magnetization direction that isrewritable by application of a prescribed magnetic field. The peripheralcircuitry is provided in a region adjacent to the memory array, forconducting data read operation and data write operation from and to thememory array. The first and second power supply lines supply anoperating voltage to the peripheral circuitry. Each of the first andsecond power supply lines is provided at least at a prescribed distanceaway from the magnetic storage portion of a nearest one of the memorycells so that a peak magnetic field generated by a peak current flowingtherethrough has a strength smaller than a prescribed value in themagnetic storage portion of the nearest memory cell. The prescribedvalue is determined in view of magnetization characteristics of thememory cells.

According to yet another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a peripheral circuitry,a power supply node, a power supply line, and a decoupling capacitor.The memory array has a plurality of memory cells for magnetic datastorage arranged therein. Each memory cell includes a magnetic storageportion having an electric resistance varying according to amagnetization direction that is rewritable by application of a magneticfield. The peripheral circuitry is provided in a region adjacent to thememory array, and conducts data read operation and data write operationfrom and to the memory array. The power supply node faces the peripheralcircuitry in a first direction with the memory array interposedtherebetween, and receives an operating power supply voltage of theperipheral circuitry. The power supply line extends between the powersupply node and the peripheral circuitry in the first direction, andtransmits the operating power supply voltage. The decoupling capacitoris provided between the power supply line and a ground voltage in atleast one of a region between the power supply node and the memory arrayand a region between the peripheral circuitry and the memory array.

According to a further aspect of the present invention, a thin filmmagnetic memory device includes a memory array and a plurality of dummymagnetic elements. The memory array has a plurality of memory cells formagnetic data storage arranged in a matrix. The plurality of dummymagnetic elements are provided at an end of the memory array along atleast one of memory cell rows and memory cell columns, and having afixed magnetization direction.

According to a still further aspect of the present invention, a thinfilm magnetic memory device includes a memory array, a plurality offirst wirings, and an inductance element. The memory array has aplurality of memory cells for magnetic data storage arranged therein,and each memory cell includes a first magnetic element. The plurality offirst wirings are provided for the memory array. Each first wiring iselectrically connected to the first magnetic element included in atleast one of the plurality of memory cells. The inductance elementincludes a second wiring formed in a same wiring layer as that of theplurality of first wirings in a region outside the memory array, and asecond magnetic element formed in a same layer as that of the firstmagnetic elements in the region outside the memory array andelectrically connected to the second wiring.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells, a firstwiring, and a second wiring. The plurality of memory cells are arrangedin a matrix for magnetic data storage. The first wiring applies a writemagnetic field to a memory cell selected for data write operation. Thesecond wiring is provided farther away from the plurality of memorycells than is the first wiring, and supplies to the first wiring a writecurrent for generating the write magnetic field. In the data writeoperation, magnetic fields generated from the first and second wiringscancel each other in at least a part of a region along a longitudinaldirection of the first and second wirings.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells for magneticdata storage, a plurality of peripheral circuitries, and a plurality ofpower supply lines. The plurality of memory cells is divided into aplurality of banks. The plurality of banks are selectively written ineach write operation. The plurality of peripheral circuitries areprovided corresponding to the plurality of banks. Each peripheralcircuitry conducts at least data write operation to a correspondingbank. The plurality of power supply lines are provided corresponding tothe plurality of peripheral circuitries. Each power supply line suppliesan operating voltage to a corresponding peripheral circuitry. Each powersupply line is provided in a region corresponding to at least one ofbanks other than a corresponding bank and a bank that may be writtensimultaneously with the corresponding bank.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells, a pluralityof first write lines, a plurality of second write lines, and a pluralityof wirings. The plurality of memory cells are arranged in a matrix formagnetic data storage. The plurality of first write lines are providedcorresponding to one of memory cell rows and memory cell columns, andselectively receive a data write current in order to mainly apply amagnetic field of an easy-axis direction to a selected memory cell. Theplurality of second write lines are provided corresponding to the otherof the memory cell rows and the memory cell columns, and selectivelyreceive a data write current in order to mainly apply a magnetic fieldof a hard-axis direction to the selected memory cell. The plurality ofwirings are formed from an electrically conductive material. A residualmagnetic field margin along the easy-axis direction and a residualmagnetic field margin along the hard-axis direction have differentvalues when the memory cell is subjected to both a magnetic field noisegenerated from a nearest one of the first write lines other than thecorresponding first write line and a magnetic field noise generated froma nearest one of the second write lines other than the correspondingsecond write line. One of the plurality of wirings that is locatednearest to the memory cells extends in such a direction that a magneticfield generated by a current flowing therethrough mainly has in thememory cells a component along either the easy-axis direction or thehard-axis direction which corresponds to a greater magnetic fieldresidual margin.

According to a yet further aspect of the present invention, a thin filmmagnetic memory device includes a plurality of memory cells, a pluralityof first write lines, a plurality of second write lines, and a powersupply line. The plurality of memory cells are arranged in a matrix formagnetic data storage. The plurality of first write lines are providedcorresponding to one of memory cell rows and memory cell columns, andselectively receive a data write current in order to mainly apply amagnetic field of an easy-axis direction to a selected memory cell. Theplurality of second write lines are provided corresponding to the otherof the memory cell rows and the memory cell columns, and selectivelyreceive a data write current in order to mainly apply a magnetic fieldof a hard-axis direction to the selected memory cell. The power supplyline is included in a path of the data write current. A residualmagnetic field margin along the easy-axis direction and a residualmagnetic field margin along the hard-axis direction have differentvalues when the memory cell is subjected to both a magnetic field noisegenerated from a nearest one of the first write lines other than thecorresponding first write line and a magnetic field noise generated froma nearest one of the second write lines other than the correspondingsecond write line. The power supply line extends in such a directionthat a magnetic field generated by a current flowing therethrough mainlyhas in the memory cells a component along either the easy-axis directionor the hard-axis direction which corresponds to a greater residualmargin.

Accordingly, a main advantage of the present invention is as follows:since the magnetic fields generated by the first and second power supplylines cancel each other in the memory array, erroneous writing andreduced operation margin caused by the magnetic noises from the powersupply lines can be prevented, whereby stable operation is achieved.

The magnetic noises from the power supply lines can be applied to thememory array in the easy-axis direction of the magnetic storage portions(tunneling magneto-resistance-elements). This suppresses the magneticnoise of the hard-axis direction to the non-selected memory cell groupof the selected column, thereby preventing erroneous writing caused bythe magnetic noises generated from the power supply lines in data writeoperation. In the operation other than data write operation as well,magnetic noises that rotate the magnetization direction of the magneticstorage portions (tunneling magneto-resistance elements) will not beapplied to the memory cells. This prevents reduction in read operationmargin caused by the magnetic noises from the power supply lines.

The magnetic noise from each power supply line has a peak strengthsmaller than a prescribed value in the memory cell located nearest tothe power supply line, and the prescribed value is determined in view ofmagnetization characteristics of the memory cells. As a result, theoperation stability will not be impeded by the magnetic noises from thepower supply lines.

The decoupling capacitor receiving a peak current is provided on aregion of the power supply line other than a region near the memoryarray. Such efficient arrangement of the decoupling capacitor enablessuppression of the magnetic noises from the power supply lines.

Moreover, the dummy magneto-resistance elements provided at the end ofthe memory array prevent the magnetic field from becoming discontinuousat the end of the memory array. Therefore, the operation margin of thememory cells arranged at the end region of the memory array will not bedegraded.

The inductance element can be formed using a magnetic element capable ofbeing manufactured simultaneously with the memory cells in themanufacturing process of the memory cells. As a result, the inductanceelement can be fabricated without increasing the number of steps in themanufacturing process.

A magnetic noise from the first wiring (which corresponds to a leakmagnetic filed of the write magnetic filed) and a magnetic noise fromthe second wiring included in the path of the write current cancel eachother in the non-selected memory cells. This reduces the magnetic noisesto the non-selected memory cells, thereby improving operationreliability of the thin film magnetic memory device.

When the memory cells are divided into a plurality of banks that areselectively written in data write operation (i.e., the plurality ofbanks will not be simultaneously selected for data write operation),erroneous writing to the non-selected memory cells is prevented fromoccurring in the data write operation. As a result, operationreliability of the thin film magnetic memory device is improved.

The non-selected memory cells located near the selected memory cell aremost likely to be subjected to erroneous writing of the data. Therefore,one of the wirings other than the write lines which is located nearestto the memory cells extends in such a direction that the nearest wiringapplies to these non-selected memory cells a magnetic noise having thesame direction as that of a relatively large margin for erroneouswriting. This prevents erroneous writing to the non-selected memorycells from occurring in data write operation, whereby operationreliability of the thin film magnetic memory device is improved.

As described above, the non-selected memory cells located near theselected memory cell are most likely to be subjected to erroneouswriting of the data. Therefore, a power supply line receiving arelatively large current extends in such a direction that it applies tothese non-selected memory cells a magnetic noise having the samedirection as that of a relatively large margin for erroneous writing.This prevents erroneous writing to the non-selected memory cells fromoccurring in data write operation, whereby operation reliability of thethin film magnetic memory device is improved.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram showing the overall structure of anMRAM device according to an embodiment of the present invention.

FIG. 2 is a circuit diagram showing an example of the structure of amemory array in FIG. 1.

FIG. 3 is a waveform chart illustrating data write operation and dataread operation to and from an MTJ memory cell.

FIG. 4 is a block diagram illustrating the arrangement of power supplylines for peripheral circuitry according to a first embodiment of thepresent invention.

FIG. 5 is a cross-sectional view taken along line X-Y in FIG. 4, showinga first arrangement example of the power supply lines according to thefirst embodiment.

FIG. 6 is a cross-sectional view taken along line X-Y in FIG. 4, showinga second arrangement example of the power supply lines according to thefirst embodiment.

FIG. 7 is a block diagram illustrating a first arrangement example ofthe power supply lines for peripheral circuitry according to a firstmodification of the first embodiment.

FIG. 8 is a block diagram illustrating a second arrangement example ofthe power supply lines for peripheral circuitries according to the firstmodification of the first embodiment.

FIG. 9 is a block diagram illustrating a first arrangement example ofthe power supply lines for peripheral circuitry according to a secondmodification of the first embodiment.

FIGS. 10A, 10B and 10C are cross-sectional views taken along line P-Q inFIG. 9, showing the first arrangement example of the power supply linesaccording to the second modification of the first embodiment.

FIG. 11 is a block diagram illustrating a second arrangement example ofthe power supply lines for peripheral circuitry according to the secondmodification of the first embodiment.

FIGS. 12A, 12B and 12C are cross-sectional views taken along line V-W inFIG. 11, showing the second arrangement example of the power supplylines according to the second modification of the first embodiment.

FIG. 13 is a block diagram illustrating an arrangement example of thepower supply lines for peripheral circuitries according to a thirdmodification of the first embodiment.

FIGS. 14A, 14B and 14C are cross-sectional views taken along line R-S inFIG. 13, showing the arrangement example of the power supply linesaccording to the third modification of the first embodiment.

FIG. 15 is a block diagram showing a first arrangement example of thepower supply lines according to a second embodiment of the presentinvention.

FIG. 16 is a block diagram showing a second arrangement example of thepower supply lines according to the second embodiment.

FIG. 17 is a block diagram showing a first arrangement example of thepower supply lines according to a modification of the second embodiment.

FIG. 18 is a block diagram showing a second arrangement example of thepower supply lines according to the modification of the secondembodiment.

FIG. 19 is a block diagram showing a first arrangement example of adecoupling capacitor according to a third embodiment of the presentinvention.

FIG. 20 is a block diagram showing a second arrangement example of thedecoupling capacitor according to the third embodiment.

FIG. 21 is a block diagram showing a first arrangement example of adecoupling capacitor according to a first modification of the thirdembodiment.

FIG. 22 is a block diagram showing a second arrangement example of thedecoupling capacitor according to the first modification of the thirdembodiment.

FIG. 23 is a block diagram showing a first arrangement example ofdecoupling capacitors according to a second modification of the thirdembodiment.

FIG. 24 is a block diagram showing a second arrangement example of thedecoupling capacitors according to the second modification of the thirdembodiment.

FIG. 25 is a conceptual diagram showing the structure around a memoryarray according to a fourth embodiment of the present invention.

FIG. 26 is a conceptual diagram showing the structure around the memoryarray according to a modification of the fourth embodiment.

FIG. 27 is a conceptual diagram showing the structure around a memoryarray according to a fifth embodiment of the present invention.

FIG. 28 is a cross-sectional view illustrating the structure of aninductance element in FIG. 27.

FIG. 29 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to a sixth embodiment of the presentinvention.

FIG. 30 is a circuit diagram showing the structure of bit line driversin FIG. 29.

FIG. 31 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to a first modification of the sixthembodiment.

FIG. 32 is a circuit diagram showing the structure of bit line driversin FIG. 31.

FIG. 33 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to a second modification of the sixthembodiment.

FIG. 34 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to a third modification of the sixthembodiment.

FIG. 35 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to a fourth modification of the sixthembodiment.

FIG. 36 is a block diagram illustrating a first arrangement example ofpower supply lines according to a seventh embodiment of the presentinvention.

FIG. 37 is a block diagram illustrating a second arrangement example ofpower supply lines according to the seventh embodiment.

FIG. 38 is a conceptual diagram showing noises that are steadily appliedto the non-selected memory cells, and illustrating the arrangement ofwirings according to an eighth embodiment of the present invention.

FIG. 39 schematically shows the structure of an MTJ memory cell.

FIG. 40 is a conceptual diagram illustrating data read operation fromthe MTJ memory cell.

FIG. 41 is a conceptual diagram illustrating data write operation to theMTJ memory cell.

FIG. 42 is a conceptual diagram illustrating the relation between thedata write current and the magnetization direction of a tunnelingmagneto-resistance element in data write operation to the MTJ memorycell.

FIG. 43 is a conceptual diagram showing the array structure of MTJmemory cells arranged in a matrix in an integrated manner.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that the samereference numerals and characters denote the same or correspondingportions throughout the figures.

First Embodiment

Referring to FIG. 1, an MRAM device 1 according to an embodiment of thepresent invention conducts random access in response to an externalcontrol signal CMD and an external address signal ADD in order toreceive write data DIN and output read data DOUT.

MRAM device 1 includes a memory array 2 having a plurality of MTJ memorycells arranged in a matrix, and peripheral circuits 5 a, 5 b, 5 c forconducting read and write operations from and to memory array 2.Peripheral circuits 5 a, 5 b, 5 c are-provided in a region around memoryarray 2. Hereinafter, peripheral circuits 5 a, 5 b, 5 c are sometimesgenerally referred to as peripheral circuitry 5 or peripheral circuitry5#.

A plurality of write word lines WWL and a plurality of read word linesRWL are provided corresponding to the MTJ memory cell rows (hereinafter,sometimes simply referred to as “memory cell rows”). A plurality of bitlines BL are provided corresponding to the MTJ memory cell columns(hereinafter, sometimes simply referred to as “memory cell columns”).The structure of memory array 2 will be described more detail later.

Peripheral circuitry 5 includes a control circuit 10, a row decoder 20,a column decoder 25, a word line driver 30, and read/write controlcircuits 50, 60. These elements are all provided in the region aroundmemory array 2. Note that the arrangement of peripheral circuitry 5 isnot limited to that shown in FIG. 1.

Control circuit 10 controls the overall operation of MRAM device 1 inorder to conduct a prescribed operation according to control signal CMD.Row decoder 20 selects a row in memory array 2 according to a rowaddress RA designated by address signal ADD. Column decoder 25 selects acolumn in memory array 2 according to a column address CA designated byaddress signal ADD.

Word line driver 30 selectively activates a read word line RWL (in dataread operation) or a write word line WWL (in data write operation) basedon the row selection result of row decoder 20. Row address RA and columnaddress CA designate an MTJ memory cell to be read or written(hereinafter, sometimes referred to as “selected memory cell”).

Write word lines WWL are coupled to a ground voltage GND in a region 6facing word line driver 30 with memory array 2 interposed therebetween.Read/write control circuits 50, 60 collectively refer to a circuit groupthat is provided in a region adjacent to memory array 2 in order toapply a data write current and a sense current (data read current) to abit line BL of the selected memory cell column (hereinafter, sometimesreferred to as “selected column”) in the read and write operations.

Referring to FIG. 2, memory array 2 has a plurality of MTJ memory cellsMC arranged in n rows by m columns (where n, m is a natural number). Aread word line RWL, a write word line WWL, a bit line BL and a referencevoltage line SL are provided for each MTJ memory cell MC. Read wordlines RWL and write word lines WWL extend in the row directioncorresponding to the memory cell rows. Bit lines BL and referencevoltage lines SL extend in the column direction corresponding to thememory cell columns.

Accordingly, read word lines RWL1 to RWLn, write word lines WWL1 toWWLn, bit lines BL1 to BLm and reference voltage lines SL1 to SLm areprovided in the entire memory array 2. Note that, hereinafter, the readword lines, write word lines, bit lines and reference voltage lines aresometimes generally referred to as RWL, WWL, BL and SL, and sometimesspecifically referred to as RWL1, WWL1, BL1, SL1 and the like.

In data write operation, word line driver 30 couples one end of a writeword line WWL of the selected memory cell row (hereinafter, sometimesreferred to as “selected row”) to a power supply voltage Vcc. Asdescribed above, the other end of each write word line WWL is coupled toground voltage GND in region 6. This allows a data write current Ip ofthe row direction to be applied to write word line WWL of the selectedrow in the direction from word line driver 30 toward region 6.

FIG. 3 is a waveform chart illustrating data write operation and dataread operation to and from an MTJ memory cell.

First, data write operation will be described. Word line driver 30couples a write word line WWL of the selected row to power supplyvoltage Vcc according to the row selection result of row decoder 20 inorder to activate it to high level (hereinafter, referred to as “Hlevel”). On the other hand, write word lines WWL of the non-selectedrows are retained in inactive state, i.e., at low level (hereinafter,referred to as “L level”), and therefore the voltage thereof is retainedat ground voltage GND.

A data write current Ip of the row direction thus flows through writeword line WWL of the selected row. As a result, a magnetic field of thedirection along the hard axis HA of free magnetic field VL is applied toeach tunneling magneto-resistance element TMR in the MTJ memory cells ofthe selected row. No current flows through write word lines WWL of thenon-selected rows.

In data write operation, no read word line RWL is activated. In otherwords, read word lines RWL are retained in inactive state (L level), andaccess transistors ART are not turned ON. Accordingly, reference voltagelines SL do not act, and the voltage thereof is retained at groundvoltage GND.

Read/write control circuits 50, 60 controls bit line voltages at bothends of memory array 2 so that a data write current ±Iw having thedirection according to the write data level is produced on bit line BLof the selected column.

For example, in order to write data “1”, read/write control circuit 60sets the bit line voltage to high-voltage state (H level: power supplyvoltage Vcc), and read/write control circuit 50 sets the bit linevoltage to low-voltage state (L level: ground voltage GND). As a result,a data write current +Iw flows through bit line BL of the selectedcolumn in the direction from read/write control circuit 60 towardread/write control circuit 50.

In order to write data “0”, read/write control circuits 50, 60 controlthe bit line voltages in the, opposite manner. As a result, a data writecurrent −Iw flows through bit line BL of the selected column in thedirection from read/write control circuit 50 toward read/write controlcircuit 60.

Data write current ±Iw flowing through bit line BL in the columndirection generates a data write magnetic field. This data writemagnetic field is applied to tunneling magneto-resistance element TMR inthe easy-axis direction of free magnetic layer VL.

By setting the respective directions of data write currents Ip, ±Iw,free magnetic layer VL in the selected memory cell can be magnetizedalong the easy axis in the direction according to the write data level.

Note that, the direction of data write current ±Iw for generating amagnetic field in the easy-axis direction is herein controlled accordingto the write data level, and the direction of data write current Ip forgenerating a magnetic field in the hard-axis, direction is fixedregardless of the write data level. This simplifies the structure forapplying a data write current to write word line WWL.

Hereinafter, data read operation will be described.

In data read operation, word line driver 30 activates a read word lineRWL of the selected row to H level according to the row selection resultof row decoder 20. Read word lines RWL of the non-selected rows areretained in inactive state (L level). In data read operation, no writeword line WWL is activated. In other words, every write word line WWL isretained in inactive state (L level: ground voltage GND).

Before data read operation, bit lines BL are precharged to, e.g., groundvoltage GND. When data read operation is started, a read word line RWLof the selected row is activated to H level, and corresponding accesstransistors ATR are turned ON. In the MTJ memory cells corresponding tothese access transistors ATR, tunneling magneto-resistance elements TMRare each electrically coupled between a reference voltage (groundvoltage GND) and a corresponding bit line BL.

For example, if a bit line of the selected column is pulled up to powersupply voltage Vcc, a sense current Is is applied only to tunnelingmagneto-resistance element TMR of the selected memory cell. As a result,bit line BL of the selected column is subjected to a voltage changeaccording to the electric resistance of tunneling magneto-resistanceelement TMR in the selected memory cell, that is, according to thestorage data level of the selected memory cell.

It is now assumed that ΔV0 and ΔV1 denote a voltage change on bit lineBL of the selected column when the selected memory cell stores data “0”and “1”, respectively. The storage data of the selected memory cell isread by sensing and amplifying the difference between the voltage on bitline BL of the selected memory cell and reference voltage Vref.Reference voltage Vref has an intermediate value of ΔV0 and ΔV1.

The voltage level of reference voltage lines SL is set to ground voltageGND in both read and write operations. Accordingly, reference voltagelines SL need only be coupled to a node for supplying ground voltage GNDwithin, e.g., a region in read/write control circuit 50 or 60. Referencevoltage lines SL may either extend in the row direction or columndirection.

Note that, as is appreciated from the following description, the presentinvention is directed to the arrangement of power supply lines forsupplying an operating voltage to the peripheral circuitry of memoryarray 2. Although FIG. 2 shows a simple memory array structure, thepresent invention is applicable regardless of the arrangement of MTJmemory cells and signal lines (such as bit lines BL) in memory array 2.For example, the present invention is applicable to a memory arrayhaving an open bit line structure or a folded bit line structure.

FIG. 4 is a block diagram illustrating the arrangement of power supplylines for the peripheral circuitry according to the first embodiment.

Peripheral circuitry 5 in FIG. 4 corresponds to each peripheral circuit5 a, 5 b, 5 c of FIG. 1. Referring to FIG. 4, operating voltages ofperipheral circuit 5, that is, power supply voltage Vcc and groundvoltage GND, are supplied through a power supply voltage line PL and aground line GL.

Hereinafter, power supply voltage line PL and ground line GL aresometimes generally referred to as “power supply lines”.

Power supply voltage line PL is coupled to a power supply node 7 forreceiving power supply voltage Vcc from the outside, and supplies powersupply voltage Vcc to peripheral circuitry 5. Similarly, ground line GLis coupled to a ground node 8 for receiving ground voltage GND from theoutside, and supplies ground voltage GND to peripheral circuitry 5.These power supply lines are arranged so that the magnetic fieldsrespectively generated by the current flowing through power supplyvoltage line PL and ground line GL cancel each other in memory array 2.

In the example of FIG. 4, power supply voltage line PL and ground lineGL extend in the same direction in the region near peripheral circuitry5. Moreover, power supply node 7 and ground node 8 are provided so thatthe currents flow through power supply voltage line PL and ground lineGL in the opposite directions.

FIGS. 5 and 6 are cross-sectional views taken along line X-Y in FIG. 4.FIGS. 5 and 6 shows first and second arrangement examples of the powersupply lines according to the first embodiment.

Referring to FIG. 5, in the first arrangement example of the firstembodiment, power supply voltage line PL and ground line GL are providedin a region near memory array 2. Power supply voltage line PL and groundline GL are both formed in a metal wiring layer located either above orbelow tunneling magneto-resistance elements TMR. In FIG. 5, power supplyvoltage line PL and ground line GL are arranged in the layer locatedabove tunneling magneto-resistance element TMR. However, these powersupply lines may alternatively be provided in a layer located belowtunneling magneto-resistance element TMR.

With this structure, the magnetic field generated by the current flowingthrough power supply voltage line PL (shown by solid line in FIG. 5) andthe magnetic field generated by the current flowing through ground lineGL (shown by dashed line in FIG. 5) cancel each other in memory array 2,that is, tunneling magneto-resistance element TMR.

An inrush peak current is generated on these power supply linesespecially upon power-on or during circuit operation. However, magneticnoises caused by the peak current on these power supply lines alsocancel each other in memory array 2. Therefore, the MRAM device can bestably operated while preventing erroneous writing to the MTJ memorycells.

Moreover, metal wirings formed in the same metal wiring layer can beused as power supply voltage line PL and ground line GL. This reducesthe number of metal wiring layers required for the MRAM device, therebycontributing to simplification of the manufacturing process.

Referring to FIG. 6, in the second arrangement example of the firstembodiment, power supply voltage line PL and ground line GL are formedin different wiring layers located either above or below tunnelingmagneto-resistance elements TMR. Power supply voltage line PL and groundline GL overlap each other in the vertical direction.

This structure further reduces the difference between the distance frompower supply voltage line PL to memory array 2 and the distance fromground line GL to memory array 2. As a result, the magnetic noises fromthe power supply lines cancel each other in memory array 2 to a greaterdegree. Accordingly, an operation margin can be more effectively assuredas well as erroneous operation is more effectively prevented as comparedto the arrangement example of FIG. 5.

First Modification of First Embodiment

In the first modification of the first embodiment, the memory array isdivided into a plurality of memory blocks, and the peripheral circuitsare provided corresponding to the memory blocks. The arrangement ofpower supply lines in the above structure will be described.

FIGS. 7 and 8 are block diagrams respectively showing first and secondarrangement examples of the power supply lines for the peripheralcircuits according to the first modification of the first embodiment.

Referring to FIG. 7, memory array 2 of FIG. 1 is divided into, e.g., twomemory blocks MBa, MBb. In the first arrangement example, peripheralcircuitry 5 shared by memory blocks MBa, MBb is provided at the boundarybetween memory blocks MBa, MBb. Like the first embodiment, power supplyvoltage Vcc and ground voltage GND are supplied to peripheral circuitry5 through power supply voltage line PL and ground line GL. Power supplynodes 7 a, 7 b are provided at both ends of power supply voltage linePL, and ground nodes 8 a, 8 b are provided at both ends of ground lineGL. Specific arrangement of power supply voltage line PL and ground lineGL is the same as that of FIGS. 5 and 6.

With the above structure, a current flows through the respective currentpaths on power supply voltage line PL and ground line GL for supplyingpower supply voltage Vcc and ground voltage GND to each part ofperipheral circuitry 5. The magnetic fields generated by the currentsflowing through the current paths cancel each other in the memory block.Accordingly, the same effects as those of the first embodiment can beobtained even when the peripheral circuitry is provided for memory array2 divided into a plurality of memory blocks.

Referring to FIG. 8, in the second arrangement example according to thefirst modification of the first embodiment, the peripheral circuitry isprovided for every memory block. In the illustrated example, peripheralcircuitries 5, 5# are provided corresponding to memory blocks MBa, MBb,respectively.

Power supply voltage Vcc and ground voltage GND are supplied toperipheral circuitry 5 through a power supply voltage line PLa and aground line GLa. Similarly, power supply voltage Vcc and ground voltageGND are supplied to peripheral circuitry 5# through a power supplyvoltage line PLb and a ground line GLb.

Power supply voltage lines PLa, PLb and ground lines GLa, GLb extend inthe same direction. Power supply nodes 7 a, 7 b for supplying powersupply voltage Vcc to respective power supply voltage lines PLa, PLbface each other along the extending direction of the power supply lineswith the memory blocks (memory array) interposed therebetween.Similarly, ground nodes 8 a, 8 b for supplying ground voltage GND torespective ground lines GLa, GLb face each other along the extendingdirection of the power supply lines with the memory blocks (memoryarray) interposed therebetween.

The power supply node and the ground node corresponding to the sameperipheral circuitry face each other with the memory blocks (memoryarray) interposed therebetween. As a result, a current flows in theopposite directions in power supply voltage line PLa and ground line GLacorresponding to peripheral circuitry 5. Similarly, a current flows inthe opposite directions in power supply voltage line PLb and ground lineGLb corresponding to peripheral circuitry 5#. Moreover, a current flowsin the opposite directions in power supply voltage lines PLa, PLb, and acurrent flows in the opposite directions in ground lines GLa, GLb.

Power supply voltage lines PLa, PLb and ground lines GLa, GLb need onlybe formed in a metal wiring layer or layers located either above orbelow tunneling magneto-resistance elements TMR, as in the case of FIG.5 or 6.

With this structure, the same effects as those of the first embodimentcan be obtained even when the memory array is divided into a pluralityof blocks and the peripheral circuitry is provided for every memoryblock.

Second Modification of First Embodiment

In the first embodiment and the first modification thereof, the powersupply lines for the peripheral circuitry are provided in the regionaround the memory array (i.e., in the vicinity of the memory array). Forimproved integration of the MRAM device, power supply lines may beprovided above or below the memory array so as to extend across thememory array.

FIG. 9 is a block diagram illustrating a first arrangement example ofthe power supply lines for the peripheral circuitry according to thesecond modification of the first embodiment.

Referring to FIG. 9, in the first arrangement example according to thesecond modification of the first embodiment, power supply voltage linePL and ground line GL for supplying power supply voltage Vcc and groundvoltage GND to peripheral circuitry 5 are provided above and/or belowmemory array 2 so as to extend across memory array 2.

Power supply node 7 and ground node 8 face peripheral circuitry 5 alongthe extending direction of the power supply lines with memory array 2interposed therebetween. Accordingly, a current flows in the oppositedirections in power supply voltage line PL and ground line GL.

FIGS. 10A to 10C are cross-sectional views taken along line P-Q in FIG.9. FIGS. 10A to 10C specifically show the first arrangement example ofthe power supply lines according to the second modification of the firstembodiment.

In the example of FIG. 10A, power supply voltage line PL and ground lineGL are formed in a metal wiring layer located either above or belowtunneling magneto-resistance elements TMR, as in the case of FIG. 5. InFIG. 10A, power supply voltage line PL and ground line GL are formed ina layer located above tunneling magneto-resistance elements TMR.However, these power supply lines may be formed in a layer located belowtunneling magneto-resistance elements TMR. Moreover, forming these powersupply lines in the same metal wiring layer reduces the number of metalwiring layers required for the MRAM device.

With this structure, a reduced operation margin and erroneous writingcaused by the magnetic noises from the power supply lines can beprevented even when the power supply lines are provided above or belowmemory array 2 so as to extend across memory array 2.

In the example of FIG. 10B, power supply voltage line PL and ground lineGL are formed in different metal wiring layers located either above orbelow tunneling magneto-resistance elements TAR, and overlap each otherin the vertical direction, as in the case of FIG. 6.

This structure also prevents the adverse effects of the magnetic noisesfrom the power supply lines as in the case of FIG. 10A. Note that, inFIG. 10B as well, power supply voltage line PL and ground line GL may beformed in a layer located below tunneling magneto-resistance elementsTMR.

As shown in FIG. 10C, power supply voltage line PL and ground line GLmay be provided in the layers located above and below tunnelingmagneto-resistance elements TMR, respectively. However, since a currentflows in the opposite directions in power supply voltage line PL andground line GL, the magnetic noises generated by these power supplylines interact with each other in a constructive manner in the regionwhere tunneling magneto-resistance elements TMR are provided (i.e.,memory array). Accordingly, in the case where a current flows in theopposite directions in power supply voltage line PL and ground line GL,these power supply lines must be provided in a layer or layers locatedeither above or below tunneling magneto-resistance elements TMR.

FIG. 11 is a block diagram illustrating a second arrangement example ofthe power supply lines for the peripheral circuitry according to thesecond modification of the first embodiment.

Referring to FIGS. 9 and 11, in the second arrangement example accordingto the second modification of the first embodiment, a plurality of powersupply voltage lines PL and a plurality of ground lines GL are providedfor supplying power supply voltage Vcc and ground voltage GND toperipheral circuitry 5. In FIG. 11, two power supply voltage lines PL1,PL2 and two ground lines GL1, GL2 are provided by way of example. Acurrent flows in the same direction in power supply voltage lines PL1,PL2. Similarly, a current flows in the same direction in ground linesGL1, GL2. This structure reduces the current density of each wiring,thereby reducing the possibility of disconnection of wirings caused byelectromigration or the like.

FIGS. 12A to 12C are cross-sectional views taken along line V-W in FIG.11. FIGS. 12A to 12C specifically show the second arrangement example ofthe power supply lines according to the second modification of the firstembodiment.

In the example of FIG. 12A, power supply voltage lines PL1, PL2 andground lines GL1, GL2 are formed in a metal wiring layer located eitherabove or below tunneling magneto-resistance elements TMR, as in the caseof FIG. 10A. In the illustrated example, the power supply lines areformed in a layer located above tunneling magneto-resistance elementsTMR. However, the power supply lines may alternatively be formed in alayer located below tunneling magneto-resistance elements TMR. Formingthe power supply lines in the same metal wiring layer reduces the numberof metal wiring layers required for the MRAM device.

In the example of FIG. 12B, power supply voltage lines PL1, PL2 andground lines GL1, GL2 are formed in different metal wiring layerslocated either above or below tunneling magneto-resistance elements TMR,and overlap each other in the vertical direction, as in the case of FIG.10B. In the illustrated example, the power supply lines are formed inthe layers located above tunneling magneto-resistance elements TMR.However, the power supply lines may be formed in metal wiring layerslocated below tunneling magneto-resistance elements TMR.

In the example of FIG. 12C, the power supply lines are formed in thelayers located above and below tunneling magneto-resistance elementsTMR. For example, power supply voltage line PL1 and ground line GL1 areformed in the same metal wiring layer located above tunnelingmagneto-resistance elements TMR, and power supply voltage line PL2 andground line GL2 are formed in the same metal wiring layer located belowtunneling magneto-resistance elements TMR.

In this example, the wirings having the same current directionvertically overlap each other with tunneling magneto-resistance elementsTMR interposed therebetween. In other words, the wirings are arranged inpairs according to the current direction. Preferably, the wirings ofeach pair are arranged vertically symmetrically with respect totunneling magneto-resistance elements TMR. For example, power supplyvoltage lines PL1, PL2 having the same current direction are arrangedvertically symmetrically with respect to tunneling magneto-resistanceelements TMR. Similarly, ground lines GL1, GL2 having the same currentdirection are arranged vertically symmetrically with respect totunneling magneto-resistance elements TMR.

With this structure, the magnetic noises generated from the power supplylines cancel each other in tunneling magneto-resistance elements TMR. Asa result, the arrangement of power supply lines capable of suppressingthe adverse effects of the magnetic noises from the power supply linescan be implemented using both metal wiring layers located above andbelow tunneling magneto-resistance elements TMR.

Third Modification of First Embodiment

In the third modification of the first embodiment, the peripheralcircuitries are provided on both sides of the memory array. Thearrangement of power supply lines in this structure will now bedescribed.

FIG. 13 is a block diagram illustrating the arrangement of power supplylines according to the third modification of the first embodiment.

Referring to FIG. 13, in the third modification of the first embodiment,the power supply lines supply power supply voltage Vcc and groundvoltage GND to peripheral circuitries 5 a, 5 b that face each other withmemory array 2 interposed therebetween.

More specifically, power supply voltage line PLa and ground line GLasupply power supply voltage Vcc and ground voltage GND to peripheralcircuitry 5 a. Power supply voltage line PLb and ground line GLb supplypower supply voltage Vcc and ground voltage GND to peripheral circuitry5 b. As in the case of FIG. 9, a current flows in the oppositedirections in the power supply voltage line and the ground line forsupplying an operating voltage to the same peripheral circuitry.

For example, power supply node 7 a and ground node 8 a corresponding toperipheral circuitry 5 a face peripheral circuitry 5 a with memory array2 interposed therebetween. Power supply voltage line PLa extends betweenpower supply node 7 a and peripheral circuitry 5 a, and ground line GLaextends between ground node 8 a and peripheral circuitry 5 a.

Similarly, power supply node 7 b and ground node 8 b corresponding toperipheral circuitry 5 b face peripheral circuitry 5 b with memory array2 interposed therebetween. Power supply voltage line PLb extends betweenpower supply node 7 b and peripheral circuitry 5 b, and ground line GLbextends between ground node 8 b and peripheral circuitry 5 b.

Accordingly, a current flows in the opposite directions in power supplyvoltage lines PLa, PLb, and flows in the opposite directions in groundlines GLa, GLb.

FIGS. 14A to 14C are cross-sectional views taken along line R-S in FIG.13. FIGS. 14A to 14C specifically show the arrangement of power supplylines according to the third modification of the first embodiment.

Referring to FIG. 14A, in a first arrangement example, power supplyvoltage lines PLa, PLb and ground lines GLa, GLb are formed in a metalwiring layer located either above or below tunneling magneto-resistanceelements TMR. Power supply voltage lines PLa, PLb having oppositecurrent directions are arranged close to each other. Similarly, groundlines GLa, GLb are arranged close to each other.

This structure enables suppression of the adverse effects of themagnetic noises from the power supply lines on the memory array, theregion where tunneling magneto-resistance elements TMR are provided. Inthe example of FIG. 14A, the power supply lines are formed in the layerlocated above tunneling magneto-resistance elements TMR. However, thesepower supply lines may alternatively be formed in a layer located belowtunneling magneto-resistance elements TMR. Moreover, forming the powersupply lines in the same metal wiring layer reduces the number of metalwiring layers required for the MRAM device.

Referring to FIG. 14B, in a second arrangement example, power supplyvoltage lines PLa, PLb are formed close to each other in different metalwiring layers located either above or below tunneling magneto-resistanceelements, and overlap each other in the vertical direction. Similarly,ground lines GLa, GLb are formed close to each other in different metalwiring layers located either above or below tunneling magneto-resistanceelements, and overlap each other in the vertical direction.

In this case, a current flows in the opposite directions in the powersupply lines formed in the same metal wiring layer. In other words,power supply voltage line PLa and ground line GLa are formed in the samemetal wiring layer, and power supply voltage line PLb and ground lineGLb are formed in the same metal wiring layer.

As in the case of FIG. 14A, this structure enables suppression of theadverse effects of the magnetic noises from the power supply lines onthe region where tunneling magneto-resistance elements TMR are provided(i.e., memory array).

In the example of FIG. 14B, the power supply lines are formed in themetal wiring layers located above tunneling magneto-resistance elementsTMR. However, these power supply lines may alternatively be formed inthe metal wiring layers located below tunneling magneto-resistanceelements TMR.

Referring to FIG. 14C, in a third arrangement example, the power supplylines are formed in the layers located above and below tunnelingmagneto-resistance elements TMR, as in the case of FIG. 12C. Forexample, power supply voltage lines PLa, PLb are formed in the samemetal wiring layer located above tunneling magneto-resistance elementsTMR, and ground lines GLb, GLa are formed in the same metal wiring layerlocated below tunneling magneto-resistance elements TMR.

In this example, the wirings having the same current direction arearranged vertically symmetrically with respect to tunnelingmagneto-resistance elements TMR. The wirings are thus arranged in pairsaccording to the current direction. For example, power supply voltageline PLa and ground line GLb having the same current direction arearranged vertically symmetrically with respect to tunnelingmagneto-resistance elements TMR. Similarly, power supply voltage linePLb and ground line GLa having the same current direction are arrangedvertically symmetrically with respect to tunneling magneto-resistanceelements TMR.

As a result, the arrangement of power supply lines capable ofsuppressing the adverse effects of the magnetic noises from the powersupply lines can be implemented using both metal wiring layers locatedabove and below tunneling magneto-resistance elements TMR.

Note that the direction of the current flowing through power supplyvoltage lines PLa, PLb and ground lines GLa, GLb in FIG. 8 is the sameas that in FIG. 13. Therefore, the power supply lines in the secondarrangement example of the first modification of the first embodiment inFIG. 8 may be provided near memory array 2 with the structure of FIGS.14A to 14C.

Second Embodiment

As described in “Description of the Background Art”, in the MRAM device,the non-selected memory cells located on the same memory cell row asthat of the selected memory cell is subjected only to a prescribed datawrite magnetic field of the hard-axis (HA) direction. Similarly, thenon-selected memory cells located on the same memory cell column as thatof the selected memory cell is subjected only to a prescribed data writemagnetic field of the easy-axis (EA) direction.

In each tunneling magneto-resistance element TMR, free magnetic layer VLis magnetized in the direction according to the storage data level (“1”or “0”) along the easy axis EA. Accordingly, the non-selected memorycells corresponding to the same bit line as that of the selected memorycell are most likely to be subjected to erroneous rewriting of themagnetization direction of free magnetic layer VL. In other words, thenon-selected memory cells corresponding to the same bit line as that ofthe selected memory cell are most likely to be subjected to erroneouswriting of the data.

Such erroneous writing occurs when magnetic noise is applied to thenon-selected memory cells of the selected column and the magnetic fieldof the hard-axis (HA) direction exceeds switching magnetic fieldstrength HSW in FIG. 42. Accordingly, the magnetic noise of thehard-axis (HA) direction must be especially suppressed in memory array2.

If the magnetic noises from, e.g., the power supply lines rotate themagnetization direction of free magnetic layer VL of the MTJ memory cellaway from the easy-axis (EA) direction during data read operation or thelike, the resistance value of tunneling magneto-resistance element TMRbecomes equal to an intermediate value of R1 and R0. This causesreduction in read operation margin.

FIG. 15 is a block diagram showing a first arrangement example of thepower supply lines according to the second embodiment of the presentinvention.

Referring to FIG. 15, write word lines WWL extend in the row directionand bit lines BL extend in the column direction in memory array 2. Adata write magnetic field generated by data write current Ip flowingthrough write word line WWL is applied to tunneling magneto-resistanceelement TMR in the hard-axis (HA) direction. On the other hand, amagnetic field generated by data write current ±Iw flowing through bitline BL is applied to tunneling magneto-resistance element TMR in theeasy-axis (EA) direction.

Power supply voltage line PL and ground line GL are provided forperipheral circuitry 5 corresponding to memory array 2. Power supplyvoltage line PL and ground line GL extend in the same direction as thatof bit lines BL for generating a data write magnetic field of theeasy-axis (EA) direction. Power supply voltage Vcc is supplied to powersupply voltage line PL through power supply node 7. Ground voltage GNDis supplied to ground line GL through ground node 8.

With the above structure, the magnetic fields generated by the currentsflowing through power supply voltage line PL and ground line GL, thatis, the magnetic noises from the power supply lines, are applied tomemory array 2 in the easy-axis (EA) direction of tunnelingmagneto-resistance element TMR.

As a result, the magnetic noises of the hard-axis (HA) direction appliedto the non-selected memory cells of the selected column are suppressed,thereby preventing erroneous writing caused by the magnetic noisesgenerated from the power supply lines in data write operation.

In the operation other than data write operation as well, the magneticnoises that rotate the magnetization direction of free magnetic layer VLin magneto-resistance element TMR will not be applied to the MTJ memorycells. This prevents reduction in read operation margin caused by themagnetic noises from the power supply lines.

The second embodiment may be combined with the first embodiment and themodifications thereof in order to arrange the power supply lines so thatthe magnetic noises generated from power supply voltage line PL andground line GL cancel each other in memory array 2. This enablessuppression of the adverse effects of the magnetic noises from the powersupply lines on the memory array.

FIG. 16 is a block diagram showing a second arrangement example of thepower supply lines according to the second embodiment.

Referring to FIG. 16, the structure of FIG. 15 is applicable even whenthe power supply lines are provided above and/or below memory array 2 soas to extend across memory array 2.

In this arrangement example as well, the magnetic fields generated bythe currents flowing through power supply voltage line PL and groundline GL are applied to memory array 2 in the easy-axis (EA) direction oftunneling magneto-resistance element TMR. As a result, the same effectsas those of FIG. 15 can be obtained.

Modification of Second Embodiment

FIG. 17 is a block diagram showing a first arrangement example of thepower supply lines according to a modification of the second embodiment.

The modification of the second embodiment is different from the secondembodiment in FIG. 15 in that the power supply lines are arranged sothat the magnetic noises from the power supply lines have prescribedstrength or less in memory array 2.

Referring to FIG. 17, the distance r from power supply voltage line PLto tunneling magneto-resistance element TMR in the nearest MTJ memorycell is determined in view of a peak current flowing through the powersupply line. This perk current can be obtained by, e.g., circuitsimulation at the time of design.

More specifically, provided that Ipeak is a peak current flowing throughpower supply voltage line PL, the magnetic noise corresponding to thepeak current has peak strength Hpeak defined by the following expression(1), where k is a proportional constant:Hpeak=k·(Ipeak/r)  (1).

Distance r is designed according to the following expression (2) so thatpeak strength Hpeak defined by the above expression (1) is smaller thanprescribed strength hp that is determined in view of the magnetizationcharacteristics of the MTJ memory cell:Hpeak<hp  (2).

Prescribed strength hp in the above expression (2) corresponds to marginΔh in FIG. 42. Margin Δh is commonly set to about 20% of switchingmagnetic field strength HSW. This prevents operation stability of theMRAM device from being impeded by the magnetic noises generated by thepower supply lines.

Note that the structure of FIG. 17 is applied to each type of powersupply line (power supply voltage line and ground line). In other words,the distance from ground line GL to tunneling magneto-resistance elementTMR in the nearest MTJ memory cell is also designed similarly.

FIG. 18 is a block diagram showing a second arrangement example of thepower supply lines according to the modification of the secondembodiment.

Referring to FIG. 18, the structure of FIG. 17 is applicable even whenthe power supply lines are provided above and/or below memory array 2 soas to extend across memory array 2.

In this case as well, arrangement of the power supply lines need only bedesigned according to the above expressions (1), (2) based on thedistance r from each power supply line to the nearest tunnelingmagneto-resistance element TMR. The modification of the secondembodiment may be combined with the first embodiment and themodifications thereof. This enables further suppression of the adverseeffects of the magnetic noises from the power supply lines on memoryarray 2.

Note that, in FIGS. 17 and 18, the power supply lines are arranged sothat the magnetic noises from the power supply lines are applied in theeasy-axis (EA) direction of tunneling magneto-resistance element TMR.However, the modification of the second embodiment is not limited tothis. The arrangement of the power supply lines may be designed based onthe distance from the power supply line to the nearest tunnelingmagneto-resistance element TMR regardless of the extending direction ofthe power supply lines.

Third Embodiment

As described in the second embodiment, the magnetic noises from thepower supply lines are maximized upon generation of a peak current. Adecoupling capacitor is commonly provided for the power supply lines inorder to suppress power supply variation. A high-frequency current suchas peak current on the power supply line passes through the decouplingcapacitor. The decoupling capacitor occupies a relatively large areabecause it must have a certain level of capacitance. Efficientarrangement of the decoupling capacitor is therefore important forreduced size and improved integration of the MRAM device.

FIGS. 19 and 20 are block diagrams illustrating first and secondarrangement examples of the decoupling capacitor according to the thirdembodiment of the present invention.

Referring to FIG. 19, power supply voltage line PL extends in, e.g., thecolumn direction, and transmits power supply voltage Vcc from powersupply node 7 to peripheral circuitry 5. Power supply node 7 andperipheral circuitry 5 face each other along the extending direction ofpower supply voltage line PL with memory array 2 interposedtherebetween. Ground node 8 and ground line GL are provided on the sameside as peripheral circuitry 5 with respect to memory array 2.Accordingly, power supply voltage line PL extends across the regionbetween power supply node 7 and memory array 2, the region near memoryarray 2 and the region between memory array 2 and peripheral circuitry5.

Decoupling capacitor 70 is electrically coupled between power supplyvoltage line PL and ground line GL in the region between memory array 2and peripheral circuitry 5 rather than in the region near memory array2. A peak current is generated on power supply voltage line PL inresponse to a current consumed by peripheral circuitry 5. This peakcurrent is generated ahead of decoupling capacitor 70. Therefore, thepeak current will not flow in the region near memory array 2. Efficientarrangement of the decoupling capacity thus enables further suppressionof the magnetic noises from the power supply lines to memory array 2.

Power supply voltage line PL may extend in the direction other than thecolumn direction. However, by providing power supply voltage line PL inthe same direction as that of bit line BL, the power supply lines can bearranged in the same manner as that of the second embodiment. Therefore,the adverse effects of the magnetic noises from the power supply linescan be suppressed.

Referring to FIG. 20, the structure of FIG. 19 is applicable even whenthe power supply line is provided above or below memory array 2 so as toextend across memory array 2.

In this case as well, decoupling capacitor 70 is electrically coupledbetween power supply voltage line PL and ground line GL in the regionbetween memory array 2 and peripheral circuitry 5 rather than in theregion near memory array 2. As a result, the same effects as those inFIG. 19 can be obtained even when the power supply line extends acrossmemory array 2.

First Modification of Third Embodiment

FIGS. 21 and 22 are block diagrams showing first and second arrangementexamples of the decoupling capacitor according to the first modificationof the third embodiment.

Referring to FIG. 21, peripheral circuitry 5, power supply node 7, powersupply voltage line PL, ground line GL and ground node 8 are arranged inthe same manner as that of FIG. 19. Therefore, detailed descriptionthereof will not be repeated.

In the first modification of the third embodiment, a decouplingcapacitor 71 is provided on power supply voltage line PL in the regionbetween power supply node 7 and memory array 2. Decoupling capacitor 71is electrically coupled between power supply voltage line PL and groundline GL. With this structure, a peak current generated by the currentconsumed by peripheral circuitry 5 is removed by decoupling capacitor 71without flowing through the region near memory array 2. Like the thirdembodiment, the first modification of the third embodiment enablesfurther suppression of the adverse effects of the magnetic noises fromthe power supply lines on memory array 2.

Referring to FIG. 22, the structure of FIG. 21 is applicable even whenthe power supply line is provided above or below memory array 2 so as toextend across memory array 2.

In this case as well, decoupling capacitor 71 is provided on powersupply voltage line PL in the region between power supply node 7 andmemory array 2 rather than in the region near memory array 2. With thisstructure, the same effects as those in FIG. 21 can be obtained evenwhen the power supply line extends across memory array 2.

Second Modification of Third Embodiment

FIGS. 23 and 24 are block diagrams showing first and second arrangementexamples of the decoupling capacitors according to the secondmodification of the third embodiment.

Referring to FIG. 23, in the second modification of the thirdembodiment, the decoupling capacitors of the third embodiment and thefirst modification thereof are arranged in combination. Morespecifically, in the example of FIG. 23, both decoupling capacitors 70,71 in FIGS. 19 and 20 are provided. This arrangement is designed whenthere is a relatively large margin in the layout of the MRAM device.This structure enables further suppression of the magnetic noise frompower supply voltage line PL to memory array 2.

Similarly, in the example of FIG. 24, the power supply line is providedabove or below memory array 2 so as to extend across memory array 2, anddecoupling capacitors 70, 71 in FIGS. 20, 22 are provided. Thisstructure enables further suppression of the magnetic noise from thepower supply line to memory array 2.

Note that the arrangement of the decoupling capacitor (or capacitors)according to the third embodiment and the first and second modificationsthereof is applicable to the power supply lines arranged according tothe first embodiment, the second embodiment and the modifications of thefirst and second embodiments. In this case, the effects of the aboveembodiments and modifications can also be obtained. Therefore, theadverse effects of the magnetic noises from the power supply lines onthe MTJ memory cells are more strongly removed, enabling stableoperation of the MRAM device.

Fourth Embodiment

Referring to FIG. 25, in the fourth embodiment, a plurality of dummy,magneto-resistance elements DTMR are arranged in a peripheral region 110at the end of memory array 2 where a plurality of memory cells MC arearranged. Dummy magneto-resistance elements DTMR are arranged in a rowor column along at least one of the memory cell rows and memory cellcolumns.

Each dummy magneto-resistance element DTMR has the same shape andstructure as those of tunneling magneto-resistance element TMR in memorycell MC. More specifically, like the structure in FIGS. 40 and 41,tunneling magneto-resistance element TMR and dummy magneto-resistanceelement DTMR each has a fixed magnetic layer FL having a fixedmagnetization direction, a free magnetic layer VL having a magnetizationdirection rewritable by an applied magnetic field, and anantiferromagnetic material layer AFL for fixing the magnetizationdirection of fixed magnetic layer FL.

As described before, in memory cell MC, fixed magnetic layer FL has afixed magnetization direction 11, and free magnetic layer VL has amagnetization direction 12 rewritable by a data write magnetic fieldaccording to the write data level. In dummy magneto-resistance elementDTMR, however, magnetization direction 12 d of free magnetic layer VL isthe same as magnetization direction 11 d of fixed magnetic layer FL.These magnetization directions 11 d, 12 d are preset so as to cancel themagnetic field generated by a wiring 13 located nearest to dummymagneto-resistance elements DTMR.

For example, wiring 13 located close to dummy magneto-resistanceelements DTMR may be a power supply line such as power supply voltageline PL and ground line GL. Since these wirings are commonly formed inthe topmost layer of the chip, tunneling magneto-resistance elements TMRand dummy magneto-resistance elements DTMR would be formed in a layerlocated below wiring 13. Accordingly, a magnetic field from wiring 13 isapplied to dummy magneto-resistance elements DTMR in the direction shownby dashed line in FIG. 25 (i.e., to the left in FIG. 25). Therefore,magnetization directions 11 d, 12 d of dummy magneto-resistance elementDTMR are preset to the opposite direction (i.e., to the right in FIG.25).

This structure reduces the magnetic noises applied from wiring 13 (suchas power supply line) provided in the peripheral region of memory array2 to memory cells MC in memory array 2. As a result, operation stabilityof each memory cell MC is improved.

Since magnetization direction 11 of the fixed magnetic layer in memorycell MC is the same as magnetization directions 11 d (fixed magneticlayer) and 12 d (free magnetic layer) of dummy magneto-resistanceelement DTMR, dummy magneto-resistance elements DTMR can be magnetizedsimultaneously in the process of magnetizing free magnetic layers FL ofmemory cells MC. In other words, a separate magnetizing process is notrequired for dummy magneto-resistance elements DTMR.

Moreover, dummy magneto-resistance elements DTMR arranged at the end ofthe memory array prevent the magnetic field from becoming discontinuousat the end of the memory array. Therefore, the operation margin ofmemory cells MC arranged at the end region of the memory array will notbe degraded. Moreover, dummy magneto-resistance elements DTMR have thesame shape and structure as those of tunneling magneto-resistanceelements TMR. Therefore, dummy magneto-resistance elements DTMR can bemanufactured together with tunneling magneto-resistance elements TMR. Inother words, a separate manufacturing process is not required for dummymagneto-resistance elements DTMR.

Moreover, the structure of the fourth embodiment prevents discontinuityof the shape at the end of memory array 2. Therefore, tunnelingmagneto-resistance elements TMR at the end of memory array 2 will have auniform shape. In order to ensure continuity of the shape of thewirings, a dummy write word line DWWL corresponding to write word lineWWL, and a dummy bit line DBL corresponding to bit line BL are providedfor dummy magneto-resistance elements DTMR that need not be writtenselectively.

Modification of Fourth Embodiment

Referring to FIG. 26, the modification of the fourth embodiment isdifferent from the fourth embodiment in that dummy magneto-resistanceelements DTMR provided in peripheral region 110 at the end of memoryarray 2 are replaced with dummy magnetic elements 26. Dummy magneticelements 26 include magnetic elements having a fixed magnetizationdirection. However, dummy magnetic elements 26 do not have the sameshape and structure as those of tunneling magneto-resistance element TMRin memory cell MC. For example, a magnetic element corresponding toantiferromagnetic material layer AFL in tunneling magneto-resistanceelement TMR may be used as dummy magnetic element 26. Accordingly, thesame effects as those of the fourth embodiment can be obtained even whendummy magnetic elements 26 having a different shape and structure fromthose of tunneling magneto-resistance elements TMR are provided in theperipheral region. More specifically, the modification of the fourthembodiment also reduces the magnetic noises applied from wiring 13 (suchas power supply line) provided in the peripheral region of memory array2 to memory cells MC in memory array 2. As a result, operation stabilityof each memory cell MC is improved.

Fifth Embodiment

Referring to FIG. 27, in the fifth embodiment, a wiring 130 for formingan inductance element is provided in a region outside memory array 2.For example, wiring 130 is provided at peripheral circuitry. 5. As inthe fourth embodiment and the modification thereof, dummymagneto-resistance elements DTMR or dummy magnetic elements 26 may beprovided in peripheral region 110 at the end of memory array 2. Thisreduces the magnetic noise applied to memory cells MC in memory array 2.Wiring 130 is electrically coupled to magnetic elements ITMR having thesame shape and structure as those of tunneling magneto-resistanceelement TMR in memory cell MC.

FIG. 28 is a cross-sectional view illustrating the structure of theinductance element. For comparison, FIG. 28 shows a cross-sectional viewof memory cell MC in memory array 2 and a cross-sectional view of wiring130 at peripheral circuitry 5.

Referring to FIG. 28, in memory array 2, an access transistor ATR isformed on a semiconductor substrate SUB. Access transistor ATR hassource/drain regions (n-type regions) 32, 34 and a gate 33. Source/drainregion 32 is electrically coupled to a reference voltage line SL througha metal film formed in a contact hole 35. A read word line RWL isprovided as a wiring for connecting gates 33 to each other in a gatelayer.

A write word line WWL is formed in a metal wiring layer located abovereference voltage line SL. Tunneling magneto-resistance element TMR isprovided in a layer located above write word line WWL. Tunnelingmagneto-resistance element TMR is electrically coupled to source/drainregion 34 of access transistor ATR through a strap 37 and a metal filmformed in a contact hole 36. Strap 37 is provided in order toelectrically couple tunneling magneto-resistance element TMR to accesstransistor ATR, and is formed from a conductive material. A bit line BLis electrically coupled to tunneling magneto-resistance element TMR, andis formed in a layer located above tunneling magneto-resistance elementTMR.

In peripheral circuitry 5, wiring 130 formed in the same wiring layer asthat of bit line BL is electrically coupled to magnetic elements ITMRthrough a metal film formed in a contact hole 39. Magnetic elements ITMRare formed in the same layer as that of tunneling magneto-resistanceelements TMR in memory array 2, and have the same shape and structure asthose of tunneling magneto-resistance element TMR. Accordingly, magneticelements ITMR can be manufactured simultaneously in the manufacturingprocess of memory cells MC. In other words, a separate manufacturingprocess is not required for magnetic elements ITMR.

Referring back to FIG. 27, in magnetic elements ITMR connected to wiring130, magnetization direction 11 i of the fixed magnetic layer is thesame as magnetization direction 12 i of the free magnetic layer. Thesemagnetization directions 11 i, 12 i are the same as magnetizationdirection 11 of the fixed magnetic layer in tunneling magneto-resistanceelement TMR. This eliminates the need for a separate process ofmagnetizing magnetic elements ITMR.

An inductance element 31 formed by wiring 130 and at least one magneticelement ITMR coupled thereto can be used as a circuit element.Alternatively, inductance element 31 may be connected in series with apower supply line for supplying an operating voltage. In this case,inductance element 31 can be used to suppress a peak current such asinrush current generated upon power-on.

A current flowing through wiring 130 of inductance element 31 is presetso that the magnetic field generated by this current is smaller than athreshold value for rewriting magnetization direction 12 i of the freemagnetic layer in magnetic element ITMR. As a result, the inductancevalue of inductance element 31 can be retained stably.

Sixth Embodiment

In the sixth embodiment, preferred arrangement of power supply lines andwirings receiving a data write current will be described.

FIG. 29 is a conceptual diagram showing the arrangement of bit lines andpower supply lines according to the sixth embodiment.

Referring to FIG. 29, bit lines BL and write word lines WWL are providedfor memory cells MC arranged in a matrix in memory array 2. Bit lines BLare provided corresponding to the memory cell columns, and write wordlines WWL are provided corresponding to the memory cell rows. Asdescribed before, a data write current for generating a magnetic fieldalong the easy-axis direction of tunneling magneto-resistance elementTMR is applied to bit line BL. A data write current for generating amagnetic field along the hard-axis direction of tunnelingmagneto-resistance element TMR is applied to write word line WWL. Inother words, bit lines BL extend along the hard-axis direction HA oftunneling magneto-resistance element TMR, and write word lines WWLextend along the easy-axis direction EA of tunneling magneto-resistanceelements TMR. Bit line BL is divided into a plurality of bit lines ineach memory cell column. For example, bit lines BL11, BL21, BL31 . . .are provided in the first memory cell column.

A set of power supply voltage line PL and ground line GL are providedfor a plurality of bit lines in each memory cell column. Power supplyvoltage line PL and ground line GL extend parallel to bit lines BL.Power supply voltage line PL and ground line GL are shared by bit linesBL11, BL21, BL31 . . . that are located adjacent to each other in thelongitudinal direction. One end of power supply voltage line PL iselectrically coupled to power supply node 7 for supplying power supplyvoltage Vcc. One end of ground line GL is electrically coupled to groundnode 8 for supplying ground voltage GND. Bit lines BL for applying adata write magnetic field to the selected memory cell are formed closerto tunneling magneto-resistance elements TMR than are power supplyvoltage line PL and ground line GL for supplying a data write current tobit line BL.

A bit line driver is provided at both ends of each bit line BL. Forexample, bit line drivers BDVa11, BDVb11 are provided at both ends ofbit line BL11. Bit line drivers BDVa21, BDVb21 are provided at both endsof bit line BL21. Bit line drivers BDVa31, BDVb31 are provided at bothends of bit line BL31. Hereinafter, bit line drivers BDVa11, BDVa21,BDVa31 . . . provided at one ends of bit lines BL are sometimesgenerally referred to as bit line drivers BDVa. Similarly, bit linedrivers BDVb11 BDVb21, BDVb31 . . . provided at the other ends of bitlines BL are sometimes generally referred to as bit line drivers BDVb.

Referring to FIG. 30, bit line driver BDVa has a P-channel MOS (MetalOxide Semiconductor) transistor 41, an N-channel MOS transistor 42, andlogic gates 44, 46. P-channel MOS transistor 41 is electrically coupledbetween a node Na (which corresponds to one end of bit line BL) andpower supply voltage line PL. N-channel MOS transistor 42 iselectrically coupled between node Na and ground line GL. Logic gate 44outputs the NAND operation result of the level of a corresponding columnselection line CSL and write data DIN. Logic gate 46 outputs the NORoperation result of write data DIN and inverted level /CSL of acorresponding column selection line. The output of logic gate 44 isapplied to the gate of transistor 41, and the output of logic gate 46 isapplied to the gate of transistor 42. Column selection line CSL isactivated to H level when a corresponding memory cell column isselected. Otherwise, column selection line CSL is inactivated to Llevel.

Bit line driver BDVb has a P-channel MOS transistor 51, an N-channel MOStransistor 52, and logic gates 54, 56. P-channel MOS transistor 51 iselectrically coupled between a node Nb (which corresponds to the otherend of bit line BL) and power supply voltage line PL. N-channel MOStransistor 52 is electrically coupled between node Nb and ground lineGL. Logic gate 54 outputs the NAND operation result of the level of acorresponding column selection line CSL and inverted write data /DIN.Logic gate 56 outputs the NOR operation result of inverted write data/DIN and inverted level /CSL of a corresponding column selection line.The output of logic gate 54 is applied to the gate of transistor 51, andthe output of logic gate 56 is applied to the gate of transistor 52.

Bit line drivers BDVa, BDVb are activated in the selected column (columnselection line CSL is at H level). According to the level of write dataDIN, activated bit line driver BDVa selectively connects one of powersupply voltage line PL and ground line GL to node Na, and activated bitline driver BDVb selectively connects the other to node Nb.

In the non-selected columns (column selection lines CSL are at L level),bit line drivers BDVa are inactivated and do not connect node Na topower supply voltage line PL and ground line GL. Moreover, bit linedrivers BDVb are also inactivated and do not connect node Nb to powersupply voltage line PL and ground line GL.

Referring back to FIG. 29, it is now assumed that a memory cellcorresponding to bit line BL21 is selected for data write operation, anda data write current is applied in the direction from bit line driverBDVa21 to bit line driver BDVb21 according to the data write level.

In this case, bit line drivers BDVa21, BDVb21 are activated, and theremaining bit line drivers are inactivated. Accordingly, the data writecurrent flows from power supply node 7 to ground node 8 through powersupply voltage line PL (in the region corresponding to bit line BL1),bit line driver BDVa21, bit line BL21, bit line driver BDVb21, andground line GL (in the regions corresponding to bit line BL21 and bitline BL11).

In the region corresponding to bit line BL11, a current flows in theopposite directions in power supply voltage line PL and ground line GL.Therefore, as described in connection with FIGS. 10A, 10B, magneticfields applied from the power supply lines to tunnelingmagneto-resistance elements TMR cancel each other. In other words, powersupply voltage line PL and ground line GL of the same set may either beformed horizontally adjacent to each other in the same wiring layer asshown in FIG. 10A, or formed in different wiring layers so as tovertically overlap each other as shown in FIG. 10B.

The direction of the data write current flowing through bit line BL21 isopposite to that of the current flowing through ground line GL in theregion corresponding to bit line BL21. Therefore, the magnetic fieldsapplied from these currents to the non-selected memory cells cancel eachother. In the regions corresponding to the following bit lines BL31 . .. , no current flows through bit line BL, power supply voltage line PLand ground line GL. Therefore, no magnetic noise will be generated.

The above structure reduces the magnetic noises applied from the wiringsincluded in the path of the data write current supplied to bit line BLof the selected column to the non-selected memory cells, therebyimproving operation reliability of the MRAM device.

First Modification of Sixth Embodiment

In the first modification of the sixth embodiment, the structure forsimplifying the bit line driver will be described.

Referring to FIG. 31, in the first modification of the sixth embodiment,power supply voltage line PL and ground line GL are replaced with writecurrent lines WCL, /WCL. A power supply switch circuit 100 is providedfor write current line WCL, and a power supply switch circuit 105 isprovided for write current line /WCL. Power supply switch circuit 100connects one of power supply voltage Vcc and ground voltage GND to writecurrent line WCL according to write data DIN. Power supply switchcircuit 105 connects the other voltage to write current line /WCLaccording to inverted write data level /DIN. Accordingly, write currentlines WCL, /WCL are respectively connected to power supply voltage Vccand ground voltage GND, or ground voltage GND and power supply voltageVcc, in a complementary manner according to write data DIN.

Bit line drivers BDVa11 to BDVa31 . . . in the sixth embodiment arereplaced with bit line drivers BDVa′11 to BDVa′31 . . . , and bit linedrivers BDVb11 to BDVb31 . . . are replaced with bit line driversBDVb′11 to BDVb′31 . . . Hereinafter, bit line drivers BDVa′11 toBDVa′31 . . . are sometimes generally referred to as bit line driversBDVa′, and bit line drivers BDVb′11 to BDVb′31 . . . are sometimesgenerally referred to as bit line drivers BDVb′. Since the structure ofthe first modification of the sixth embodiment is otherwise the same asthat of the sixth embodiment in FIG. 29, detailed description thereofwill not be repeated.

FIG. 32 is a circuit diagram showing the structure of the bit linedrivers in FIG. 31.

Referring to FIG. 32, bit line driver BDVa′ has an N-channel MOStransistor 81 electrically coupled between write current line WCL andnode Na (one end of bit line BL). Bit line driver BDVb′ has an N-channelMOS transistor 82 electrically coupled between node Nb (the other end ofbit line BL) and write current line /WCL. Transistors 81, 82 have theirrespective gates connected to a corresponding column selection line CSL.

In the first modification of the sixth embodiment, power supply switchcircuits 100, 105 selectively connect write current lines WCL, /WCL topower supply voltage Vcc and ground voltage GND. This eliminates theneed for bit line drivers BDVa′, BDVb′ to select between write currentlines WCL, /WCL according to the write data level. In other words, theabove structure allows each bit line driver BDVa′, BDVb′ to fixedlyselect either write current line WCL or /WCL. Accordingly, each bit linedriver can be formed only from a transistor gate, whereby the structureof the bit line drivers is simplified. As a result, the circuit area isreduced, and the chip having the MRAM device mounted thereon is reducedin size.

Referring back to FIG. 31, it is now assumed that a memory cellcorresponding to bit line BL21 is selected for data write operation, anda data write current is applied in the direction from bit line driverBDVa′21 toward bit line driver BDVb′21 according to the write datalevel. In this case, the current flows through write current lines WCL,/WCL and selected bit line BL21 in the same direction as that of thecurrent flowing through power supply voltage line PL, ground line GL andselected bit line BL21 in FIG. 29, respectively. When the write data hasthe opposite level, power supply switch circuits 100, 105 reverse theconnection between write current lines WCL, /WCL and power supplyvoltage Vcc and ground voltage GND. Therefore, the current flows throughwrite current lines WCL, /WCL and selected bit line BL21 in the oppositedirection.

Like the sixth embodiment, the structure of the first modification ofthe sixth embodiment thus reduces the magnetic noises applied from thewirings included in the path of the data write current supplied to bitline BL of the selected column to the non-selected memory cells. As aresult, operation reliability of the MRAM device can be improved.

Second Modification of Sixth Embodiment

In the second modification of the sixth embodiment, power supply line PLand ground line GL of the sixth embodiment are connected to a powersupply node and a ground node at both ends.

Referring to FIG. 33, the second modification of the sixth embodiment isdifferent from the sixth embodiment in that both ends of power supplyvoltage line PL are respectively connected to power supply nodes 7 a, 7b for supplying power supply voltage Vcc, and both ends of ground lineGL are respectively connected to ground nodes 8 a, 8 b for supplyingground voltage GND. Since the structure of the second modification ofthe sixth embodiment is otherwise the same as that of the sixthembodiment in FIG. 29, detailed description thereof will not berepeated.

In FIG. 33 as well, it is assumed that a memory cell corresponding tobit line BL21 is selected for data write operation, and a data writecurrent is applied in the direction from bit line driver BDVa21 to bitline driver BDVb21. In this case, the sum of a current I1 from powersupply node 7 a and a current I2 from power supply node 7 b, that is,(I1+I2), flows through bit line BL21 as a data write current. On groundline GL, the data write current (I1+I2) is divided into a current I1 toground node 8 a and a current I2 to ground node 8 b.

In the region corresponding to bit line BL11, current I1 of the samelevel flows in the opposite directions in power supply voltage line PLand ground line GL. In the regions corresponding to bit lines BL31 . . ., current I2 of the same level flows in the opposite directions in powersupply voltage line PL and ground line GL. Accordingly, the magneticnoises having about the same strength are generated from the aboveregions of power supply voltage line PL and ground line GL. Thesemagnetic noises cancel each other in the memory cells MC.

In the region corresponding to bit line BL21 , the current flows throughbit line BL21 and ground line GL in the same manner as that described inconnection with FIG. 29, and current I2 flows through power supplyvoltage line PL in same direction with current I1 flowing through groundline GL. Accordingly, in the region corresponding to the selected bitline as well, the magnetic noises generated from power supply voltageline PL and ground line GL cancel each other in the memory cells MC. Inaddition to the effects of the example shown in the sixth embodiment,the second modification of the sixth embodiment thus enables furtherreduction in magnetic noises in the region corresponding to the selectedbit line. As a result, operation reliability of the MRAM device canfurther be improved.

Third Modification of Sixth Embodiment

In the third modification of the sixth embodiment, a power supply switchcircuit is provided at both ends of each write current line WCL, /WCLdescribed in the first modification of the sixth embodiment. In otherwords, the power supply switch circuits are provided in the same manneras that of the power supply nodes and the ground nodes described in thesecond modification of the sixth embodiment.

Referring to FIG. 34, the third modification of the sixth embodiment isdifferent from the first modification of the sixth embodiment in FIG. 31in that power supply switch circuits 100 a, 100 b are respectivelyprovided at the ends of write current line WCL and power supply switchcircuits 105 a, 105 b are respectively provided at the ends of writecurrent line /WCL. Power supply switch circuits 100 a, 100 b operate inthe same manner as that of power supply switch circuit 100, and powersupply switch circuits 105 a, 105 b operate in the same manner as thatof power supply switch circuit 105. Accordingly, write current line WCLis equivalent to one of power supply voltage line PL and ground line GLin FIG. 33 (i.e., power supply voltage line PL having both ends coupledto power supply voltage Vcc and ground line GL having both ends coupledto ground voltage GND), and write current line /WCL is equivalent to theother.

In addition to the same effects as those of the second modification ofthe sixth embodiment, the third modification of the sixth embodimentsimplifies the structure of bit line drivers BDVa′, BDVb′, therebyachieving a reduced chip area.

Fourth Modification of Sixth Embodiment

In the fourth modification of the sixth embodiment, each set of powersupply voltage line PL and ground line GL corresponds to a plurality ofmemory cell columns.

Referring to FIG. 35, in the fourth modification of the sixthembodiment, a set of power supply voltage line PL and ground line GL areprovided for every plurality of memory cell columns. For example, inFIG. 35, a set of power supply voltage line PL and ground line GL areprovided for every two memory cell columns. Bit lines BL11 to BL31 . . .BL12 to BL32 . . . correspond to the set of power supply voltage line PLand ground line GL shown in FIG. 35. Bit line drivers BDVa11, BDVb11 toBDVa31, BDVb31 . . . and BDVa12, BDVb12 to BDVa32, BDVb32 . . .respectively correspond to bit lines BL11 to BL31 . . . , BL12 to BL32 .. . Bit line drivers BDVa11, BDVb11 to BDVa31, BDVb31 . . . and BDVa12,BDVb12 to BDVa32, BDVb32 . . . receive a data write current from commonpower supply voltage line PL and common ground line GL. In other words,power supply voltage line PL and ground line GL can be shared not onlyby the bit lines adjacent to each other in the longitudinal directionbut also by the bit lines adjacent to each other in the width direction.

This structure reduces the number of power supply voltage lines PL andground lines GL while reducing the magnetic noises as in the sixthembodiment.

The structure of the fourth modification of the sixth embodiment is alsoapplicable to the first to third modifications of the sixth embodiment.In other words, a set of power supply voltage line PL and ground line GLmay be provided for every plurality of memory cell columns in the firstto third modifications of the sixth embodiment. Bit line BL need notnecessarily be divided into a plurality of bit lines in each memory cellcolumn.

In the structures of FIGS. 29, 33, 34 and the like, a current sourcecircuit for supplying a constant current may be provided between powersupply node 7, 7 a, 7 b and power supply voltage line PL so that powersupply voltage Vcc is supplied to power supply voltage line PL throughthe current source circuit. This enables a data write current to beretained stably at a prescribed level.

The arrangement of power supply voltage line PL and ground line GL forsupplying a data write current to bit line BL is shown in the sixthembodiment and the modifications thereof. However, the same structure isalso applicable to the arrangement of power supply voltage line PL andground line GL for supplying a data write current to write word lineWWL. Note that the data write current is supplied to write word line WWLin the fixed direction regardless of the write data level. Therefore,for example, one end of each write word line WWL is connected to groundline GL, and a transistor switch is provided at the other end of writeword line WWL in order to connect power supply voltage line PL and theother end of write word line WWL according to the row selection result.

Seventh Embodiment

In the seventh embodiment, effective arrangement of the power supplylines with respect to memory array 2 will be described.

Referring to FIG. 36, in a first arrangement example of the seventhembodiment, the memory array having a plurality of memory cells arrangedtherein as shown in FIG. 1 and the like is divided into banks BAa, BAb.A peripheral circuitry 5 a is provided for bank BAa, and a peripheralcircuitry 5 b is provided for bank BAb. It is herein assumed that onlyone of banks BAa, BAb is selected for data write operation. In otherwords, banks BAa, BAb will not be simultaneously selected for data writeoperation.

A power supply voltage line PLa and a ground line GLa for supplyingpower supply voltage Vcc and ground voltage GND to peripheral circuitry5 a are provided in a region corresponding to bank BAb. In other words,a power supply node 7 a and a ground node 8 a are provided on the bankBAb side of peripheral circuitry 5 a.

Similarly, a power supply voltage line PLb and a ground line GLb forsupplying power supply voltage Vcc and ground voltage GND to peripheralcircuitry 5 b are provided in a region corresponding to bank BAa. Inother words, a power supply node 7 b and a ground node 8 b are providedon the bank BAa side of peripheral circuitry 5 b.

During data write operation to bank BAa, magnetic noises are generatedfrom power supply voltage line PLa and ground line GLa supplying a datawrite current. However, these magnetic noises are generated only in theregion corresponding to bank BAb where data write operation is not beingconducted. Therefore, such magnetic noises that reduce the writeoperation margin will not be applied to bank BAa during data writeoperation thereto.

Similarly, during data write operation to bank BAb, magnetic noises aregenerated from power supply voltage line PLb and ground line GLbsupplying a data write current. However, these magnetic noises aregenerated only in the region corresponding to bank BAa where data writeoperation is not being conducted. Therefore, such magnetic noises thatreduce the write operation margin will not be applied to bank BAb duringdata write operation thereto.

Therefore, the structure of the seventh embodiment prevents the datafrom being erroneously written to the non-selected memory cells duringdata write operation, thereby improving operation reliability of theMRAM device.

FIG. 37 is a block diagram showing a second arrangement example of thepower supply voltages according to the seventh embodiment.

Referring to FIG. 37, power supply voltage line PLa and ground line GLafor supplying an operating voltage to peripheral circuitry 5 a may beprovided in the vicinity of bank BAb. Similarly, power supply voltageline PLb and ground line GLb for supplying an operating voltage toperipheral circuitry 5 b may be provided in the vicinity of bank BAa.This structure also prevents the data from being erroneously written tothe non-selected memory cells during data write operation, as in thecase of FIG. 36. As a result, operation reliability of the MRAM deviceis improved.

Note that, in FIGS. 36 and 37, the memory array is divided into twobanks that are complementarily selected for data write operation.However, the present invention is not limited to this. In other words,the memory array may be divided into three or more banks. In this caseas well, the power supply lines corresponding to each bank are providedin a region corresponding to a bank (or banks) other than thecorresponding bank and a bank that may be written simultaneously withthe corresponding bank. With this structure, the same effects as thoseof the seventh embodiment can be obtained.

The arrangement of power supply lines is not limited to that shown inFIGS. 36 and 37. The power supply lines may alternatively be arrangedaccording to the first to third embodiments and the modificationsthereof.

Eighth Embodiment

The MRAM device is required to have two types of wirings for applying adata write magnetic field to the memory cells (in the presentembodiment, bit lines BL and write word lines WWL). In data writeoperation, a data write current is necessarily applied to the two typesof wirings. Therefore, magnetic noises are steadily applied from the twotypes of wirings to the non-selected memory cells located adjacentthereto. By arranging wirings other than the above two types of wiringsin view of the steady noises, erroneous writing to the non-selectedmemory cells can be effectively prevented.

FIG. 38 is a conceptual diagram illustrating the steady noises that areapplied to the non-selected memory cells.

Referring to FIG. 38, in data write operation, a data write magneticfield corresponding to an operation point 120 or 121 is applied to theselected memory cell according to the write data level. Operation points120, 121 are designed with a margin in the region outside the asteroidcharacteristic line described in connection with FIG. 42.

A data write current is applied to write word line WWL of the adjacentrow and bit line BL of the adjacent column. Therefore, the noisecorresponding to a point 122 is steadily applied to the non-selectedmemory cells that are most susceptible to erroneous writing. Thedistances between point 122 and asteroid characteristic line along theordinate and abscissa, ΔMh and ΔMe, respectively indicate margins forerroneous writing to the non-selected memory cells along the hard-axisand easy-axis directions (hereinafter, sometimes referred to as“residual magnetic field margins”).

Erroneous writing to the non-selected memory cells would occur if thenon-selected memory cells are subjected to a magnetic noise of thehard-axis direction beyond residual magnetic field margin ΔMh.Similarly, erroneous writing to the non-selected memory cells wouldoccur if the non-selected memory cells are subjected to a magnetic noiseof the easy-axis direction beyond residual magnetic field margin ΔMe.The non-selected memory cells may be subjected to magnetic noises ofboth directions. In this case, erroneous writing may possibly occur evenif each magnetic noise does not exceed residual magnetic field marginΔMe, ΔMh. These residual magnetic field margins ΔMe, ΔMh can be used todetermine the direction of the magnetic noise (easy-axis direction orhard-axis direction) to which memory cells MC are relatively vulnerable.

Of conductive wirings other than bit lines BL and write word lines WWLfor applying a data write magnetic field to the memory cells, a wiringlocated nearest to memory cells MC (i.e., tunneling magneto-resistanceelements TMR) is provided in such a direction that the magnetic noisefrom the nearest wiring has the same direction as that of residualmagnetic field margin ΔMe or ΔMh having a greater value (hereinafter,the wiring located nearest to memory cells MC is sometimes simplyreferred to as “nearest wiring”). As a result, erroneous writing to thenon-selected memory cells can be effectively prevented.

In particular, tunneling magneto-resistance elements TMR are designed tohave an elongated shape in order to stabilize their magnetizationcharacteristics. Therefore, bit lines BL for generating a magnetic fieldof the easy-axis direction are arranged at a different pitch from thatof write word lines WWL for generating a magnetic field of theeasy-axis-direction. The relation between residual magnetic fieldmargins ΔMh, ΔMe in FIG. 38 (i.e., which residual magnetic field marginis larger than the other) can be estimated from the above pitches. Morespecifically, the residual magnetic field margin corresponding to thedirection of the magnetic field generated by the wirings of a smallerpitch (i.e., bit lines BL or write word lines WWL) is smaller than theother residual magnetic field margin. Accordingly, the nearest wiring isprovided in the same (parallel) direction as that of the wirings of agreater pitch.

Tunneling magneto-resistance element TMR is commonly designed so thatthe longitudinal direction thereof matches the easy-axis direction. Inthis case, bit lines BL for generating a magnetic field of the easy-axisdirection are arranged at a greater pitch than that of write word linesWWL for generating a magnetic field of the easy-axis direction.Accordingly, it is desirable to provide the nearest wiring parallel tobit lines BL. If the pitch relation is opposite to that described above,it is desirable to provide the nearest wiring parallel to write wordlines WWL.

It is also desirable to determine the direction of wirings receiving arelatively large current (such as power supply lines) in the same manneras that of the nearest wiring.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spritand scope of the present invention being limited only by the terms ofthe appended claims. bit lines BL. If the pitch relation is opposite tothat described above, it is desirable to provide the nearest wiringparallel to write word lines WWL.

1-20. (cancelled).
 21. A thin film magnetic memory device, comprising: amemory array having a plurality of memory cells for magnetic datastorage arranged therein, each memory cell including a magnetic storageportion having an electric resistance varying according to amagnetization direction that is rewritable by application of aprescribed magnetic field; a peripheral circuitry provided in a regionadjacent to said memory array, for conducting data read operation anddata write operation from and to said memory array; and first and secondpower supply lines for supplying an operating voltage to said peripheralcircuitry, wherein said first and second power supply lines are arrangedso that a first magnetic field generated by a current flowing throughsaid first power supply line and a second magnetic field generated by acurrent flowing through said second power supply line are applied tosaid memory array in an easy-axis direction of said magnetic storageportions.
 22. The thin film magnetic memory device according to claim21, wherein said first and second power supply lines are arranged sothat said first and second magnetic fields cancel each other in saidmemory array.
 23. The thin film magnetic memory device according toclaim 21, wherein said plurality of memory cells are arranged in amatrix, said thin film magnetic memory device further comprising: aplurality of first write lines provided corresponding to one of memorycell rows and memory cell columns, for selectively receiving a datawrite current in order to mainly apply a magnetic field of the easy-axisdirection to a selected memory cell, and a plurality of second writelines provided corresponding to the other of said memory cell rows andsaid memory cell columns, for selectively receiving a data write currentin order to mainly apply a magnetic field of a hard-axis direction tothe selected memory cell, wherein said plurality of first write linesare arranged at a greater pitch than that of said plurality of secondwrite lines.
 24. A thin film magnetic memory device, comprising: amemory array having a plurality of memory cells for magnetic datastorage arranged in a matrix; and a plurality of dummy magnetic elementsprovided at an end of said memory array along at least one of memorycell rows and memory cell columns, and having a fixed magnetizationdirection.
 25. The thin film magnetic memory device according to claim24, wherein a magnetization direction of said dummy magnetic elements isdetermined so that a magnetic field generated by said dummy magneticelement cancels a magnetic noise applied to said memory array.
 26. Thethin film magnetic memory device according to claim 25, furthercomprising: a plurality of wirings, wherein said magnetization directionof said dummy magnetic elements is determined so as to cancel a magneticfield generated by one of said plurality of wirings located nearest tosaid dummy magnetic elements.
 27. The thin film magnetic memory deviceaccording to claim 24, wherein said dummy magnetic elements have a sameshape as that of said memory cell, and each of said memory cells andeach dummy magnetic element includes a first magnetic layer having afixed magnetization direction, and a second magnetic layer having amagnetization direction rewritable by application of a magnetic field.28. The thin film magnetic memory device according to claim 27, whereinsaid first magnetic layer of each of said memory cells and each of saiddummy magnetic elements and said second magnetic layer of each of saiddummy magnetic elements are magnetized in a same direction.
 29. The thinfilm magnetic memory device according to claim 24, wherein each of saidmemory cells includes a first magnetic layer having a fixedmagnetization direction, and a second magnetic layer having amagnetization direction rewritable by a magnetic field applied in datawrite operation, and each of said dummy magnetic elements includes athird magnetic layer fixedly magnetized in a same direction as that ofsaid first magnetic layer.
 30. A thin film magnetic memory device,comprising: a memory array having a plurality of memory cells formagnetic data storage arranged therein, each of said memory cellsincluding a first magnetic element; a plurality of first wiringsprovided for said memory array, and each electrically connected to saidfirst magnetic element included in at least one of said plurality ofmemory cells; an inductance element including a second wiring formed ina same wiring layer as that of said plurality of first wirings in aregion outside said memory array, and a second magnetic element formedin a same layer as that of said first magnetic elements in the regionoutside said memory array and electrically connected to said secondwiring.
 31. The thin film magnetic memory device according to claim 30,wherein said first and second magnetic elements have a same shape andstructure.
 32. The thin film magnetic memory device according to claim30, further comprising: a power supply line for supplying an operatingvoltage, wherein said inductance element is electrically coupled inseries with said power supply line in order to suppress a peak currenton said power supply line.